Predicting Worst-Case Charge Buildup in Power-Device Field Oxides
Abstract
Existing models for worst-case charge buildup in silicon dioxide are applied
to single- and two-level field plate termination structures in n-channel power
MOSFETs. It is shown that the field-collapse model, when properly applied to
these termination structures, provides excellent agreement between experimental
and simulation worst-case breakdown-degradation results. Nonuniform charge
buildup in the termination structure field oxide is identified, and two methods
of doing device simulation that take the nonuniformity into account are
introduced. Finally, simple analytical models are presented that enable the
nonuniform charge distribution to be calculated for any field-plate structure.
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Last modified: June 14, 2005 -- © François Cellier