The Effects of Ionizing Radiation on Power-MOSFET Termination Structures

Kenneth R. Davis
Deneb Robotics, Inc.
5500 New King St.
P.O.Box 982615
Troy, Michigan 48098-2615
U.S.A.
Email: Davis@Deneb.Com
Ronald D. Schrimpf
Department of Electrical Engineering and Computer Science
Vanderbilt University
Box 1608, Station B
Nashville, Tennessee 37235
U.S.A.
Email: Ron.Schrimpf@Vanderbilt.Edu
François E. Cellier
Institute of Computational Science
ETH Zürich
CH-8092 Zürich
Switzerland
Email: FCellier@Inf.ETHZ.CH
Kenneth F. Galloway
School of Engineering
Vanderbilt University
VU Station B 351826
Nashville, Tennessee 37235-1826
U.S.A.
Email: Kenneth.F.Galloway@Vanderbilt.Edu
Donald I. Burton
Fairchild Semiconductor
125, Crestwood Road
Mountaintop, Pennsylvania 18707
U.S.A.
C. Frank Wheatley, Jr.
181, Middle Road
Drums, Pennsylvania 18222
U.S.A.

Abstract

The effects of ionizing radiation on power-MOSFET termination structures were examined through two-dimensional simulation. A wide range of sensitivity to surface-charge density was found for various devices employing floating field rings and/or equipotential field plates. Termination structures that were both insensitive to surface charge and possessed a high breakdown voltage were identified. The results were compared with measurements made on selected structures.

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