Analysis of Breakdown Phenomena in High-Voltage Electron Devices
Abstract
This paper presents a program for the simulation of two-dimensional electron
devices with high reverse bias voltage together with computational results
obtained by using this program. In order to compute the numerical solution
within reasonable execution time, the physical model is simplified in that the
effect of the emitter current has been neglected. The partial differential
equations (PDEs) describing the device have been discretized by use of finite
differences, and a Newton iteration approach was used for linearization.
Finally, the resulting set of linear algebraic equations is solved by use of
several ELLPACK modules. The program is sufficiently flexible for the
simulation of devices exhibiting a complex topology that consist of several
different materials. At hand of examples, it is demonstrated that this program
is an efficient tool for the simulation of industrial high-voltage devices.
The computational results are found to be reliable and reasonable.
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Last modified: January 19, 2006 -- © François Cellier